Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer

被引：141
|
作者：
Yin, Zongyou [1 ]
Zeng, Zhiyuan [1 ]
Liu, Juqing [1 ]
He, Qiyuan [1 ]
Chen, Peng [1 ]
Zhang, Hua [1 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
来源：
SMALL | 2013年 / 9卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
data storage; graphene oxide; memory devices; molybdenum disulfide; nanosheets; NONVOLATILE REWRITABLE MEMORY; LIQUID EXFOLIATION; CONJUGATED-POLYMER; FILMS; ELECTRODES; NANOPARTICLES; FABRICATION; TRANSISTORS;
D O I：
10.1002/smll.201201940
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：727 / 731
页数：5
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