Nonlinear coherent transport through doped nanotube junctions

被引:121
作者
Farajian, AA [1 ]
Esfarjani, K [1 ]
Kawazoe, Y [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
D O I
10.1103/PhysRevLett.82.5084
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic and phase-coherent transport properties of doped carbon nanotube junctions are studied. It is shown that there are regions of negative differential resistance in the I-V characteristic of small radius metallic cubes, which are not seen for semiconducting tubes. Their origin, as discussed, is different from that of traditional Esaki diodes and resonant tunneling structures. Semiconducting tube characteristics, however, show a region of zero current for nonzero voltages which is asymmetric with respect to the applied bias if there is different doping on each side of the junction.
引用
收藏
页码:5084 / 5087
页数:4
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