Increased Responsivity of Suspended Graphene Photodetectors

被引:168
|
作者
Freitag, Marcus [1 ]
Low, Tony [1 ]
Avouris, Phaedon [1 ]
机构
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
Graphene; photodetector; p-n junction; hot electron; surface polar phonon; electron cooling; PHOTOCURRENT; PHOTORESPONSE; DISSIPATION;
D O I
10.1021/nl4001037
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The responsivity of graphene photodetectors depends critically on the elevated temperature of the electronic subsystem upon photoexcitation. We investigate the role of the substrate in providing cooling pathways for photoexcited carriers under ambient conditions by partially suspending few-layer graphene over a trench. Through photocurrent microscopy, we observe p-n junctions near the supported/suspended interfaces that produce photothermoelectric currents. Most importantly, we find the photocurrent in suspended p-n junctions to be an order of magnitude larger than in supported structures. This enhancement is attributed to the elimination of a dominant electronic cooling channel via the surface phonons of the polar substrate. Our work documents this mechanism of energy exchange between graphene and its environment, and it points to the importance of dielectric engineering for future improved graphene photodetectors.
引用
收藏
页码:1644 / 1648
页数:5
相关论文
共 50 条
  • [1] High-responsivity graphene/hyperdoped-silicon heterostructure infrared photodetectors
    Wang, Zijing
    Yu, Xuegong
    Qiu, Xiaodong
    Fu, Jiawei
    Yang, Deren
    OPTICS AND LASER TECHNOLOGY, 2022, 153
  • [2] InGaAs/graphene infrared photodetectors with enhanced responsivity
    Yang, Qi
    Wu, Qiming
    Luo, Wei
    Yao, Wei
    Yan, Shunya
    Shen, Jun
    MATERIALS RESEARCH EXPRESS, 2019, 6 (11)
  • [3] On the Laser Formation of Suspended Graphene Channels of Photodetectors
    Nekrasov, N. P.
    Murashko, D. T.
    Vasilevsky, P. N.
    Gerasimenko, A. Yu.
    Nevolin, V. K.
    Bobrinetskiy, I. I.
    SEMICONDUCTORS, 2024, 58 (13) : 1109 - 1113
  • [4] High-responsivity graphene infrared photodetectors based on photogating
    Ogawa, Shinpei
    SPIE FUTURE SENSING TECHNOLOGIES (2020), 2020, 11525
  • [5] Carrier localization enhanced high responsivity in graphene/semiconductor photodetectors
    Hu, An-Qi
    Liu, Qiao-Li
    Guo, Xia
    CHIP, 2022, 1 (01):
  • [6] Photogating for small high-responsivity graphene middle-wavelength infrared photodetectors
    Fukushima, Shoichiro
    Shimatani, Masaaki
    Okuda, Satoshi
    Ogawa, Shinpei
    Kanai, Yasushi
    Ono, Takao
    Inoue, Koichi
    Matsumoto, Kazuhiko
    OPTICAL ENGINEERING, 2020, 59 (03)
  • [7] Preparation of Graphene-MoS2 Vertical Heterojunction for High-Responsivity Photodetectors
    Yao Jie
    Miao Xin
    Wang Shuai
    Gu Yanyun
    Gao Mingliang
    Wan Xi
    LASER & OPTOELECTRONICS PROGRESS, 2021, 58 (15)
  • [8] Ultrahigh Responsivity Photodetectors of 2D Covalent Organic Frameworks Integrated on Graphene
    Xiong, Yifeng
    Liao, Qiaobo
    Huang, Zhengping
    Huang, Xin
    Ke, Can
    Zhu, Hengtian
    Dong, Chenyu
    Wang, Haoshang
    Xi, Kai
    Zhan, Peng
    Xu, Fei
    Lu, Yanqing
    ADVANCED MATERIALS, 2020, 32 (09)
  • [9] High-responsivity graphene infrared photodetectors using photo-gating effect
    Fukushima, Shoichiro
    Shimatani, Masaaki
    Okuda, Satoshi
    Ogawa, Shinpei
    Kanai, Yasushi
    Ono, Takao
    Inoue, Koichi
    Matsumoto, Kazuhiko
    INFRARED TECHNOLOGY AND APPLICATIONS XLV, 2019, 11002
  • [10] Middle wavelength infrared graphene photodetectors with low dark-current and high responsivity
    Fukushima, Shoichiro
    Shimatani, Masaaki
    Okuda, Satoshi
    Ogawa, Shinpei
    Kanai, Yasushi
    Ono, Takao
    Inoue, Koichi
    Matsumoto, Kazuhiko
    INFRARED TECHNOLOGY AND APPLICATIONS XLVI, 2020, 11407