Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

被引：64

作者：

Liu, J. W. ^{[1
]}

Liao, M. Y. ^{[1
]}

Imura, M. ^{[1
]}

Koide, Y. ^{[1
,2
,3
]}

机构：

[1] Natl Inst Mat Sci, Opt & Elect Mat Unit, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Tsukuba, Ibaraki 3050047, Japan

[3] NIMS, Ctr Mat Res Low Carbon Emiss, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 25期

关键词：

SURFACE; CHANNEL; POWER; FETS; GAP;

D O I：

10.1063/1.4772985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-k oxide insulators (Al2O3 and HfO2) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 degrees C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 +/- 0.2 and 2.6 +/- 0.2 eV for Al2O3/H-diamond and HfO2/H-diamond heterojunctions, respectively. Band gaps of the Al2O3 and HfO2 have been determined to be 7.2 +/- 0.2 and 5.4 +/- 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al2O3/H-diamond and HfO2/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 +/- 0.2 and 2.7 +/- 0.2 eV, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772985]

引用

页数：4

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