High-speed Performance of III-nitride 410 nm Ridge Laser Diode on (20(2)over-bar(1)over-bar) plane for Visible Light Communication

被引:0
作者
Lee, Changmin [1 ]
Zhang, Chong [2 ]
Becerra, Daniel L. [1 ]
Lee, Seungguen [2 ]
Farrell, Robert M. [1 ,2 ]
Speck, James S. [1 ]
Nakamura, Shuji [1 ,2 ]
Bowers, John E. [1 ,2 ]
DenBaars, Steven P. [1 ,2 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93117 USA
来源
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词
Laser diode; GaN; Modulation; Optical communication;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The modulation characteristics of high-performance In0.1Ga0.9N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (20 (2) over bar(1) over bar) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 mu m long and 3 mu m wide cavity was 6.1 kA/cm(2) in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA(1/2) and calculated differential gain was 2.2 x 10(-16) cm(2). 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.
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页数:2
相关论文
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