High electrical resistivity of CVD-diamond

被引：13

作者：

Manca, JV ^{[1
]}

Nesladek, M ^{[1
]}

Neelen, M ^{[1
]}

Quaeyhaegens, C ^{[1
]}

De Schepper, L ^{[1
]}

De Ceuninck, W ^{[1
]}

机构：

[1] Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(98)00225-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to its combination of excellent thermo-mechanical properties and electrical properties such as the high electrical resistivity and high dielectric strength, diamond seems a promising material for specialized dielectric applications. Due to the great advances in the growth technology of diamond films by chemical vapour deposition (CVD) on e.g. Si-substrates, new applications can be expected in microelectronics. An important technological result for dielectric applications is that high electrical resistivity diamond films can be obtained after an appropriate heat treatment of the as-grown films. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：269 / 273

页数：5

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