Electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition

被引:30
|
作者
Lal, K
Meikap, AK [1 ]
Chattopadhyay, SK
Chatterjee, SK
Ghosh, M
Baba, K
Hatada, R
机构
[1] Reg Engn Coll, Dept Phys, Durgapur 713209, W Bengal, India
[2] Ramananda Coll, Dept Phys, Bankura 722122, W Bengal, India
[3] Ind Technol Ctr Nagasaki, Nagasaki 8560026, Japan
关键词
titanium nitride; ion beam-assisted deposition; electrical resistivity; electron-phonon scattering;
D O I
10.1016/S0921-4526(01)00626-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report the electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition technique in the temperature range 77 less than or equal to T less than or equal to 300 K. The residual resistivity (rho (0)) of the films decreases by increasing nitrogen partial pressure. The films show the quadratic temperature behavior of resistivity in the investigated temperature range. Attempt has been made to explain such anomalous behavior by using existing theories, (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:150 / 157
页数:8
相关论文
共 50 条
  • [1] Plasmonic properties of titanium nitride thin films prepared by ion beam assisted deposition
    Zhang, Lin-Ao
    Liu, Hao-Nan
    Suo, Xiao-Xia
    Tong, Shuo
    Li, Ying-Lan
    Jiang, Zhao-Tan
    Wang, Zhi
    MATERIALS LETTERS, 2016, 185 : 295 - 298
  • [2] Optimization of energy scope for titanium nitride films grown by ion beam-assisted deposition
    Li, W
    Ma, ZQ
    Wang, Y
    Wang, DM
    CHINESE PHYSICS LETTERS, 2006, 23 (01) : 178 - 181
  • [3] Frequency dependent conductivity of aluminium nitride films prepared by ion beam-assisted deposition
    Lal, K
    Meikap, AK
    Chattopadhyay, SK
    Chatterjee, SK
    Ghosh, P
    Ghosh, M
    Baba, K
    Hatada, R
    THIN SOLID FILMS, 2003, 434 (1-2) : 264 - 270
  • [4] Magnesium oxide films prepared by ion beam-assisted deposition
    2001, Northwest Institute for Nonferrous Metal Research (30):
  • [5] Magnesium Oxide Films Prepared by Ion Beam-assisted Deposition
    Yu, Zhinong
    Lu, Xiaojun
    Zheng, Dexiu
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2001, 30 (03):
  • [6] Magnesium oxide films prepared by ion beam-assisted deposition
    Yu, ZN
    Lu, XJ
    Zheng, DX
    RARE METAL MATERIALS AND ENGINEERING, 2001, 30 (03) : 216 - 219
  • [7] Structural and discharging properties of MgO thin films prepared by ion beam-assisted deposition
    Yu, ZN
    Seo, JW
    Zheng, DX
    Sun, J
    SURFACE & COATINGS TECHNOLOGY, 2003, 163 : 398 - 404
  • [8] Investigation on titanium nitride thin films prepared by ion beam enhanced deposition
    Xiang, Wei
    Lai, Zuwu
    Luo, Siwei
    Fang, Renchang
    Li, Wenzhi
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 1998, 18 (04): : 308 - 312
  • [9] Structural and Optical Characterization of Thermally Oxidized Titanium Thin Films Prepared by Ion Beam-assisted Deposition (IBAD) Technique
    Hamdadou, N.
    Odeh, I. M.
    JORDAN JOURNAL OF PHYSICS, 2021, 14 (02): : 101 - 109
  • [10] Aluminium nitride thin films prepared by ion beam assisted deposition method
    Watanabe, Y
    SURFACE MODIFICATION TECHNOLOGIES XI, 1998, : 814 - 825