Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation

被引：4

作者：

Driad, R. ^{[1
]}

Schmidt, R. ^{[1
]}

Kirste, L. ^{[1
]}

Loesch, R. ^{[1
]}

Mikulla, M. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2 | 2012年 / 9卷 / 02期

关键词：

passivation; hafnium oxide; heterostructure bipolar transistors; electron beam evaporation; ATOMIC LAYER DEPOSITION; ULTRATHIN HFO2 FILMS; SURFACE PASSIVATION; OPTICAL-PROPERTIES; GATE DIELECTRICS; STABILITY; SILICON;

D O I：

10.1002/pssc.201100228

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this contribution, we investigate the passivation of InGaAs/InP heterostructures using plasma assisted e-beam evaporated hafnium oxide (HfO2). The microstructure and optical properties of the HfO2 layers are first examined by X-ray reflectivity and spectroscopic ellipsometry on Si substrates. The current gain and breakdown voltage of InGaAs/InP heterostructure bipolar transistors (HBTs) have subsequently been used to evaluate the impact and efficiency of the e-beam evaporated HfO2 passivation layers. The results from these structures have been contrasted with data from similar samples encapsulated with SiO2 using conventional plasma enhanced chemical vapor deposition. The HfO2 passivated InGaAs/InP HBTs show comparable current gains as compared to unpassivated structures. More importantly, in contrast to SiO2-PECVD devices, the common emitter characteristics of HfO2 passivated HBTs show no degradation in device breakdown voltage. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：381 / 384

页数：4

共 25 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].

ASPNES, DE .

SURFACE SCIENCE, 1983, 132 (1-3) :406-421

[2] Room temperature ferromagnetism in HfO2 films [J].

Bharathi, K. Kamala ;

Venkatesh, S. ;

Prathiba, G. ;

Kumar, N. Harish ;

Ramana, C. V. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)

[3] Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 [J].

Chang, P. ;

Lee, W. C. ;

Huang, M. L. ;

Lee, Y. J. ;

Hong, M. ;

Kwo, J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03)

[4] Atomic-layer-deposited HfO2 on In0.53Ga0.47As:: Passivation and energy-band parameters [J].

Chang, Y. C. ;

Huang, M. L. ;

Lee, K. Y. ;

Lee, Y. J. ;

Lin, T. D. ;

Hong, M. ;

Kwo, J. ;

Lay, T. S. ;

Liao, C. C. ;

Cheng, K. Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (07)

[5] Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 A [J].

Chen, Yen-Ting ;

Zhao, Han ;

Yum, Jung Hwan ;

Wang, Yanzhen ;

Lee, Jack C. .

APPLIED PHYSICS LETTERS, 2009, 94 (21)

[6]

Choi KJ, 2001, INTEGR FERROELECTR, V38, P835

[7] Ozone Based Atomic Layer Deposition of Hafnium Oxide and Impact of Nitrogen Oxide Species [J].

Delabie, Annelies ;

Swerts, Johan ;

Van Elshocht, Sven ;

Jung, Sung-Hoon ;

Raisanen, Petri I. ;

Givens, Michael E. ;

Shero, Eric J. ;

Peeters, Jozef ;

Machkaoutsan, Vladimir ;

Maes, Jan Willem .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) :D259-D263

[8] Passivation of InP-based HBTs [J].

Driad, R ;

Laframboise, SR ;

Lu, ZH ;

McAlister, SP ;

McKinnon, WR .

SOLID-STATE ELECTRONICS, 1999, 43 (08) :1445-1450

[9] Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment [J].

Driad, R ;

Lu, ZH ;

Charbonneau, S ;

McKinnon, WR ;

Laframboise, S ;

Poole, PJ ;

McAlister, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :665-667

[10] OPTICAL-PROPERTIES AND ENVIRONMENTAL STABILITY OF OXIDE COATINGS DEPOSITED BY REACTIVE SPUTTERING [J].

EDLOU, SM ;

SMAJKIEWICZ, A ;

ALJUMAILY, GA .

APPLIED OPTICS, 1993, 32 (28) :5601-5605

← 1 2 3 →