Molecular glass resists for next generation lithography

被引:9
作者
Bratton, Daniel [1 ]
Ayothi, Ramakrishnan [1 ]
Felix, Nelson [1 ]
Cao, Heidi [1 ]
Deng, Hai [1 ]
Ober, Christopher K. [1 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Bard Hall, Ithaca, NY 14853 USA
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2 | 2006年 / 6153卷
关键词
Molecular Glass Resists; EUV; E-beam; chemical amplification;
D O I
10.1117/12.656630
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to meet the growing demand of the electronics industry for smaller, higher resolution features much recent attention has focused on next generation lithographic techniques, such as Extreme Ultraviolet (EUV) or e-beam lithography. Complementary to this field of research is the design of the next generation of photoresists to produce sub 50 nm feature sizes. Chemically amplified molecular glass resists are among the most promising alternatives to traditional polymeric materials. These materials are monodisperse, amorphous organic molecules which lead to high resolution patterns with low line edge roughness owing to their small size and lack of chain entanglement. In this submission, we describe our work in the development of molecular glass resists. The materials are designed with rigid cores, to ensure high T-g, and with bulky side groups to inhibit crystallization. We show that these materials are capable of producing high resolution feature sizes and show great promise in meeting the demands of emerging next-generation lithographic techniques.
引用
收藏
页码:U567 / U575
页数:9
相关论文
共 26 条
[1]   A diazoquinone positive photoresist for x-ray lithography [J].
Aviram, A ;
Bucca, D ;
Seeger, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :2968-2971
[2]   Current status of EUV photoresists [J].
Brainard, RL ;
Cobb, J ;
Cutler, CA .
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2003, 16 (03) :401-410
[3]   Intel's EUV resist development [J].
Cao, HD ;
Roberts, J ;
Dalin, J ;
Chandhok, M ;
Meagley, R ;
Panning, E ;
Shell, M ;
Rice, B .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 :484-491
[4]   Materials for future lithography [J].
Chang, SW ;
Yang, D ;
Dai, JY ;
Felix, N ;
Bratton, D ;
Tsuchiya, K ;
Kwark, YJ ;
Bravo, JP ;
Ober, CK ;
Cao, HB ;
Deng, H .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXII, PT 1 AND 2, 2005, 5753 :1-9
[5]  
CHANG SW, 2005, PMSE PREPRINTS, V92, P131
[6]   Nanometer-scale resolution of calixarene negative resist in electron beam lithography [J].
Fujita, J ;
Ohnishi, Y ;
Ochiai, Y ;
Nomura, E ;
Matsui, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4272-4276
[7]  
Fujita J, 1996, APPL PHYS LETT, V68, P1297, DOI 10.1063/1.115958
[8]   Resist blur and line edge roughness [J].
Gallatin, GM .
Optical Microlithography XVIII, Pts 1-3, 2005, 5754 :38-52
[9]   Extendibility of chemically amplified resists : Another brick wall? [J].
Hinsberg, W ;
Houle, F ;
Sanchez, M ;
Hoffhagle, J ;
Wallraff, G ;
Medeiros, D ;
Gallatin, G ;
Cobb, J .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 :1-14
[10]   Sub-10-nm-scale lithography using p-chloromethyl-methoxy-calix[4]arene resist [J].
Ishida, M ;
Fujita, JI ;
Ogura, T ;
Ochiai, Y ;
Ohshima, E ;
Momoda, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (6B) :3913-3916