An Ultra-low Loss Millimeter-wave Solid State Switch Technology Based on the Metal - Insulator - Transition of Vanadium Dioxide

被引：0

作者：

Hillman, C. ^{[1
]}

Stupar, P. A. ^{[1
]}

Hacker, J. B. ^{[1
]}

Griffith, Z. ^{[1
]}

Field, M. ^{[1
]}

Rodwell, M. ^{[2
]}

机构：

[1] Teledyne Sci Co, Thousand Oaks, CA 91320 USA

[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

来源：

2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2014年

关键词：

VO2; Phase Change Switch; Vanadium Dioxide; Low Loss RF Switch; RF-FPGA; VO2;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, Z(OFF) / Z(ON), is greater than 500:1 at 50GHz (i.e. cut-off frequency f(c) similar to 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

引用

页数：4

共 4 条

[1] FORMATION AND CHARACTERIZATION OF GRAIN-ORIENTED VO2 THIN-FILMS [J].