A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures

被引：26

作者：

Ghobadi, Nayereh ^{[1
]}

Pourfath, Mahdi ^{[1
,2
]}

机构：

[1] Univ Tehran, Sch Elect & Comp Engn, Tehran 14395515, Iran

[2] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 01期

基金：

美国国家科学基金会;

关键词：

Graphene; graphene heterostructures; graphene nanoribbon (GNR); nonequilibrium Green's function (NEGF); tunneling transistors; BORON-NITRIDE;

D O I：

10.1109/TED.2013.2291788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, for the first time device characteristics of field-effect tunneling transistors based on vertical graphene-hBN heterostructure (VTGFET) and vertical graphene nanoribbon (GNR)-hBN heterostructure (VTGNRFET) are theoretically investigated and compared. An atomistic simulation based on the nonequilibrium Green's function (NEGF) formalism is employed. The results indicate that due to the presence of an energy gap in GNRs, the ION/IOFF ratio of VTGNRFET can be much larger than that of VTGFET, which renders VTGNRFETs as promising candidates for future electronic applications. Furthermore, it can be inferred from the results that due to smaller density of states and as a result smaller quantum capacitance of GNRs in comparison with that of graphene, better switching and frequency response can be achieved for VTGNRFETs.

引用

页码：186 / 192

页数：7

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