Effects of lattice mismatches in In2O3/substrate structures on the structural, morphological and electrical properties of In2O3 films

被引：5

作者：

Bouhdjer, A. ^{[1
,2
]}

Saidi, H. ^{[2
]}

Attaf, A. ^{[2
]}

Yahia, A. ^{[2
]}

Aida, M. S. ^{[3
]}

Benkhetta, O. ^{[2
]}

Bouhdjer, L. ^{[4
]}

机构：

[1] Univ Batna 2, Dept Socle Commun Sci & Technol, Fac Technol, N3, Batna, Algeria

[2] Univ Biskra, Phys Lab Thin Films & Applicat LPCMA, Biskra, Algeria

[3] King Abdulaziz Univ, Ctr Nanotechnol, Jedahh, Saudi Arabia

[4] Mentouri Univ Constantine, Dept Phys, Lab Crystallog, Constantine 25000, Algeria

来源：

SURFACES AND INTERFACES | 2020年 / 20卷

关键词：

Indium oxide; Lattice mismatch; Ultrasonic spray; Structural and electrical properties; OXIDE THIN-FILMS; THICKNESS DEPENDENCE; ROOM-TEMPERATURE; GROWTH; GLASS;

D O I：

10.1016/j.surfin.2020.100579

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium oxide thin films were deposited by ultrasonic spray technique on ITO coated glass and single crystalline Si (400) substrates at 400 degrees C. Lattice mismatch effect on the crystalline structure, surface morphology and electrical properties of these samples is then studied. X-ray diffraction (XRD) and Raman spectroscopy patterns suggest that the films deposited on ITO coated glass substrate are polycrystalline in nature having a cubic crystal structure with a preferred grain orientation along the (222) plane. However, films deposited on Si wafer substrate, exhibit randomly oriented growth. The crystallite size varies from 18 to 66.5 nm. AFM topographical images revealed that the In2O3/ITO films follow 2D or layer-by-layer-growth. But in the case of In2O3/Si films, 3D or island growth becomes dominant. The In2O3/ITO films is found to exhibit a higher value of conductivity (sigma = 5 x 10(2) Omega(-1) cm(-1)) than the In2O3/Si films, and the low value of the RMS roughness (9.83 nm).

引用

页数：5

共 33 条

[1] Growth of ultra-thin TiO2 films by spray pyrolysis on different substrates [J].

Acik, I. Oja ;

Junolainen, A. ;

Mikli, V. ;

Danilson, M. ;

Krunks, M. .

APPLIED SURFACE SCIENCE, 2009, 256 (05) :1391-1394

[2] Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture [J].

Alvarez-Fraga, L. ;

Jimenez-Villacorta, F. ;

Sanchez-Marcos, J. ;

de Andres, A. ;

Prieto, C. .

APPLIED SURFACE SCIENCE, 2015, 344 :217-222

[3]

[Anonymous], 2007, J PHYS CHEM SOLIDS, V68, P1380

[4]

[Anonymous], 1988, THIN SOLID FILMS

[5] On tuning the preferential crystalline orientation of spray pyrolysis deposited indium oxide thin films [J].

Attaf, A. ;

Bouhdjer, A. ;

Saidi, H. ;

Aida, M. S. ;

Attaf, N. ;

Ezzaouia, H. .

THIN SOLID FILMS, 2017, 625 :177-179

[6] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[7] Structural characterization of indium oxide nanostructures: a Raman analysis [J].

Berengue, Olivia M. ;

Rodrigues, Ariano D. ;

Dalmaschio, Cleocir J. ;

Lanfredi, Alexandre J. C. ;

Leite, Edson R. ;

Chiquito, Adenilson J. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (04)

[8] Structural, morphological, optical, and electrical properties of In2O3 nanostructured thin films [J].

Bouhdjer, A. ;

Saidi, H. ;

Attaf, A. ;

Aida, M. S. ;

Jlass, Mohamed, I ;

Bouhaf, I. ;

Benkhetta, Y. ;

Bendjedidi, H. .

OPTIK, 2016, 127 (18) :7319-7325

[9] Influence of annealing temperature on In2O3 properties grown by an ultrasonic spray CVD process [J].

Bouhdjer, A. ;

Attaf, A. ;

Saidi, H. ;

Benkhetta, Y. ;

Aida, M. S. ;

Bouhaf, I. ;

Rhil, A. .

OPTIK, 2016, 127 (16) :6329-6333

[10] Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process [J].

Bouhdjer, A. ;

Attaf, A. ;

Saidi, H. ;

Bendjedidi, H. ;

Benkhetta, Y. ;

Bouhaf, I. .

JOURNAL OF SEMICONDUCTORS, 2015, 36 (08)

← 1 2 3 4 →