Thermal stability of the SrTiO3/(Ba,Sr)O stacks epitaxially grown on Si - art. no. 072913

被引：41

作者：

Marchiori, C ^{[1
]}

Sousa, M

Guiller, A

Siegwart, H

Locquet, JP

Fompeyrine, J

Norga, GJ

Seo, JW

机构：

[1] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[2] Politecn Milan, LNESS, Dipartimento Fis, I-22100 Como, Italy

[3] Ecole Polytech Fed Lausanne, IPMC, CH-1015 Ecublens, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.2174095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of epitaxial SrTiO3 on silicon relies on the preparation of a template layer consisting of a mixture of barium oxide and strontium oxide, (Ba,Sr)O. In this letter, the limited thermal stability of this template layer is demonstrated. X-ray photoemission spectroscopy measurements reveal that both SrTiO3/(Ba,Sr)O and (Ba,Sr)O/Si interfaces are susceptible to chemical reactions upon thermal treatment to an extent that is correlated with the thermal budget. These results have strong implications on the overall viability of (Ba,Sr)O as template for the growth of crystalline oxides on Si.

引用

页数：3

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