The electrical, optical, and structural properties of amorphous indium gallium zinc oxide films and channel thin-film transistors

被引：18
作者：
Jung, C. H. [1 ,2 ]
Kang, H. I. [3 ]
Yoon, D. H. [1 ,4 ]
机构：
[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
[3] Hanbat Natl Univ, Dept Elect Engn, Taejon 305719, South Korea
[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
来源：
SOLID-STATE ELECTRONICS | 2013年 / 79卷
关键词：
Transparent amorphous oxide semiconductor; a-IGZO; Thin-film transistor; TRANSPARENT; SEMICONDUCTORS;
D O I：
10.1016/j.sse.2012.10.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical, optical, and structural properties of amorphous indium gallium zinc oxide (a-IGZO) films deposited at room temperature (RI) examined before and after annealing using a radio frequency (RF) magnetron sputtering system with different hydrogen and oxygen gas flow ratios. The carrier concentration and resistivity of the a-IGZO films fabricated under O-2/Ar + O-2 and O-2/Ar-4%H-2 + O-2 atmospheres were greatly dependent on the addition of hydrogen and heat treatment. Thin-film transistors (TFTs) with an a-IGZO channel layer deposited under O-2/Ar-4%H-2 + O-2 = 1.6% exhibited good subthreshold gate voltage swing (S), on/off ratio, threshold voltage and mu(FE) of 0.4 V decade(-1), 10(8), 0.3 V and 4.8 cm(2) V-1 s(-1), respectively. From analysis of the interfacial structure in TFTs before and after annealing, the electrical conductivity of the a-IGZO channel layer was greatly affected in regard to TFT performance due to the amorphous a-IGZO channel layer and SiO2 gate insulator. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：125 / 129
页数：5
相关论文
共 20 条
[1]   Charge carrier induced lattice strain and stress effects on As activation in Si [J].
Ahn, Chihak ;
Dunham, Scott T. .
APPLIED PHYSICS LETTERS, 2008, 93 (02)
[2]   Formation of Al-doped ZnO films by de magnetron reactive sputtering [J].
Chen, M ;
Pei, ZL ;
Sun, C ;
Wen, LS ;
Wang, X .
MATERIALS LETTERS, 2001, 48 (3-4) :194-198
[3]   Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors [J].
Chiang, Hai Q. ;
McFarlane, Brian R. ;
Hong, David ;
Presley, Rick E. ;
Wager, John F. .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) :2826-2830
[4]   High mobility indium free amorphous oxide thin film transistors [J].
Fortunato, Elvira M. C. ;
Pereira, Lus M. N. ;
Barquinha, Pedro M. C. ;
do Rego, Ana M. Botelho ;
Goncalves, Goncalo ;
Vila, Anna ;
Morante, Juan R. ;
Martins, Rodrigo F. P. .
APPLIED PHYSICS LETTERS, 2008, 92 (22)
[5]   Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides [J].
Hosono, H ;
Yasukawa, M ;
Kawazoe, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 203 :334-344
[6]   Recent progress in transparent oxide semiconductors: Materials and device application [J].
Hosono, Hideo .
THIN SOLID FILMS, 2007, 515 (15) :6000-6014
[7]   Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application [J].
Hosono, Hideo .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :851-858
[8]   Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system [J].
Iwasaki, Tatsuya ;
Itagaki, Naho ;
Den, Tohru ;
Kumomi, Hideya ;
Nomura, Kenji ;
Kamiya, Toshio ;
Hosono, Hideo .
APPLIED PHYSICS LETTERS, 2007, 90 (24)
[9]   High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel [J].
Jeong, Jae Kyeong ;
Jeong, Jong Han ;
Yang, Hui Won ;
Park, Jin-Seong ;
Mo, Yeon-Gon ;
Kim, Hye Dong .
APPLIED PHYSICS LETTERS, 2007, 91 (11)
[10]   Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications [J].
Jung, C. H. ;
Kim, D. J. ;
Kang, Y. K. ;
Yoon, D. H. .
THIN SOLID FILMS, 2009, 517 (14) :4078-4081
12