GaN-based modulation doped FETs and UV detectors

GaN based modulation doped field effect transistors (MODFETs) and ultraviolet detectors are critically reviewed. AlGaN/GaN MODFETs with CW power levels of about 6 W (in devices with 1 mm gate periphery) and a minimum noise figure of 0.85 dB with an associated gain of 11 dB have been obtained at 10 GHz. As a precursor to solar-blind detectors that will be operative around 280 nm, where the solar radiation is absorbed by the ozone layer surrounding the earth, detector arrays with pixel sizes of 32 x 32 operative near the solar-blind region have been achieved. One does not have to rely on imagination to predict that devices with much improved performance will continue to be developed. (C) 2002 Elsevier Science Ltd. All rights reserved.