Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO4 TFT Fabricated on Plastic Substrates

被引：20

作者：

Kim, Dong Hun ^{[1
]}

Cho, Nam Gyu ^{[1
]}

Han, Seung Ho ^{[1
]}

Kim, Ho-Gi ^{[1
]}

Kim, Il-Doo ^{[2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Korea Inst Sci & Technol, Ctr Energy Mat Res, Seoul 130650, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 12期

关键词：

D O I：

10.1149/1.2978961

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated the thickness dependence of a room-temperature grown MgO0.3BST0.7 composite gate dielectric and an InGaZnO4 active semiconductor on the electrical characteristics of thin-film transistors (TFTs) fabricated on a polyethylene terephthalate substrate. The optimum gate dielectric and active semiconductor thickness were 300 and 30 nm, respectively. The TFT showed a high field-effect mobility of 21.34 cm(2)/V s, an on/off ratio of 8.27 x 10(6), a threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2978961] All rights reserved.

引用

页码：H317 / H319

页数：3

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