共 11 条
The inverse correlation between series resistance and parallel resistance of small molecule organic solar cells
被引:8
作者:

Wang, Kewei
论文数: 0 引用数: 0
h-index: 0
机构:
State Nucl Elect Power Planning Design & Res Inst, Beijing 100095, Peoples R China State Nucl Elect Power Planning Design & Res Inst, Beijing 100095, Peoples R China

Zheng, Yufeng
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h-index: 0
机构:
Peking Univ, Coll Engn, Beijing 100871, Peoples R China State Nucl Elect Power Planning Design & Res Inst, Beijing 100095, Peoples R China

Xu, Gu
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h-index: 0
机构:
McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 3H5, Canada State Nucl Elect Power Planning Design & Res Inst, Beijing 100095, Peoples R China

Xu, Xiuping
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h-index: 0
机构:
State Nucl Elect Power Planning Design & Res Inst, Beijing 100095, Peoples R China State Nucl Elect Power Planning Design & Res Inst, Beijing 100095, Peoples R China
机构:
[1] State Nucl Elect Power Planning Design & Res Inst, Beijing 100095, Peoples R China
[2] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 3H5, Canada
[3] Peking Univ, Coll Engn, Beijing 100871, Peoples R China
关键词:
Organic solar cells;
Series resistance;
Parallel resistance;
Inverse correlation;
PHOTOVOLTAIC CELLS;
D O I:
10.1016/j.pnsc.2015.08.005
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Understanding the inversely correlated series resistance (R-s) and parallel resistance (R-p) remains a challenge. Here ve report that the variation of R-s and R-p is inversely related through the morphology of the donor and acceptor interface in CuPc organic solar cells, when comparing the bilayer structure and bulk heterojunction structure. It was also found that the charge carrier concentration near the donor acceptor interface plays an important role in the relationships of R-s and R-p under fixed interfacial morphology, which was verified by the change of V-oc. The inversely correlated R-s and R-p contributes to the improvetnent of the fill factor, and in turn the power conversion efficiency. (C) 2015 Chinese Materials Research Society. Published by Elsevier GmbH.
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页码:323 / 326
页数:4
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