Enhanced magnetoelectric response in 2-2 bilayer 0.50Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3/NiFe2O4 thin films

被引：8

作者：

Ade, Ramesh ^{[1
]}

Sambasiva, V ^{[1
]}

Kolte, Jayant ^{[1
]}

Karthik, T. ^{[1
]}

Kulkarni, Ajit R. ^{[1
]}

Venkataramani, N. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 11期

关键词：

magnetization; ferroelectrics; magnetoelectrics; composite thin films;

D O I：

10.1088/1361-6463/aaa98f

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni1/3Nb2/3)O-3-0.35PbTiO(3)-0.15PbZrO(3) (PNNZT)/NiFe2O4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO2/Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient (alpha(E)) of similar to 0.70 V cm(-1). Oe (-1) at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications.

引用

页数：6

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