Electronic properties of quantum wires in surface-acoustic-wave based single-electron transport devices

被引：1

作者：

Hong, Li ^{[1
]}

Guo Hua-Zhong ^{[1
]}

Chuan, Lu ^{[2
]}

Ling, Li ^{[3
]}

Jie, Gao ^{[1
,2
]}

机构：

[1] Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610064, Peoples R China

[2] Natl Inst Measurement & Testing Technol, Chengdu 610021, Peoples R China

[3] Sichuan Normal Univ, Coll Phys & Eectron Egineering, Chengdu 610068, Peoples R China

来源：

ACTA PHYSICA SINICA | 2008年 / 57卷 / 09期

关键词：

quantum wire; split gate; linear electron concentration; pinch-off voltage;

D O I：

10.7498/aps.57.5863

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By fabricating a split gate on the surface of AlxGa1-x As/GaAs heterostructure, we experimentally obtain a quasi-one-dimensional quantum wire. This structure could be used to implement single-electron transport driven by surface acoustic waves. Based on structures of conduction band and distribution of electrons in the fabricated quantum wires, the influence of quantum-wire widths on the confining potential of the electrons is also discussed. Espeeially,we numerically study how the linear electron concentration depends on the applied split-gate voltage. For the quantum wires fabricated, we find that the calculated pinch-off voltages agree well with the relevant experimental values measured at 0.3 K.

引用

页码：5863 / 5868

页数：6

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