Dielectric properties of PLZT film-on-foil capacitors

被引：45

作者：

Ma, Beihai ^{[1
]}

Kwon, Do-Kyun ^{[1
]}

Narayanan, Manoj ^{[1
]}

Balachandran, U. ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Energy Syst, Argonne, IL 60439 USA

来源：

MATERIALS LETTERS | 2008年 / 62卷 / 20期

关键词：

dielectric property; PLZT film; ceramic capacitor; energy density; breakdown strength;

D O I：

10.1016/j.matlet.2008.03.060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have deposited Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films on nickel foils to create film-on-foil capacitor sheets. Measurements with PLZT films on LaNiO3-buffered Ni foils yielded the following: relative permittivity approximate to 1300 and dielectric loss (tan delta) approximate to 0.05, leakage current density of 6.6 x 10(-9) A/cm(2) (at 25 degrees C) and 1.4 x 10(-8) A/cm(2) (at 150 degrees C) and mean breakdown field strength >2.4 MV/cm. Based on the hysteresis loop measurement, an energy storage density of approximate to 17 J/cm(3) was obtained for such a capacitor at 50% of the mean breakdown field. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3573 / 3575

页数：3

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