Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices

被引：11

作者：

Chandra, S. V. Jagadeesh ^{[2
]}

Fortunato, E. ^{[2
]}

Martins, R. ^{[2
]}

Choi, Chel-Jong ^{[1
,3
]}

机构：

[1] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea

[2] Univ Nova Lisboa, Fac Ciencias & Tecnol, CENIMAT I3N, Dept Ciencia Mat, P-2829516 Caparica, Portugal

[3] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 14期

关键词：

Silicon; Germanium; HfO2; Interface; Fermi level pinning; HFO2; DIOXIDE;

D O I：

10.1016/j.tsf.2011.10.137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reduction in the accumulation capacitance value was more in Si metal-oxide-semiconductor devices than that of Ge metal-oxide-semiconductor devices after a thermal treatment irrespective of the annealing environment. Relatively, thermal treatment in oxygen environment improves the interface quality of HfO2/Ge stacks considerably, when compared with HfO2/Si stacks. Whereas, the forming gas annealing at a temperature of 400 degrees C was not so effective in improving the interface quality at HfO2/Si stack. The presence of induced negatively charged hydrogen atom in Ge lessens the Fermi level pinning at HfO2 and Ge interface. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4556 / 4558

页数：3

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