Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides

被引：80

作者：

Lee, Benjamin G. ^{[1
]}

Biberman, Aleksandr ^{[1
]}

Turner-Foster, Amy C. ^{[2
]}

Foster, Mark A. ^{[3
]}

Lipson, Michal ^{[2
]}

Gaeta, Alexander L. ^{[3
]}

Bergman, Keren ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 1-4期

关键词：

Optical frequency conversion; optical Kerr effect; optical signal processing; silicon-on-insulator technology; CHIP; NETWORKS;

D O I：

10.1109/LPT.2008.2009945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present ultra-broadband wavelength conversion in silicon photonic waveguides at a data rate of 40 Gb/s. The dispersion-engineered device demonstrates a conversion bandwidth spanning the entire S-, C-, and L-bands of the ITU grid. Using a continuous-wave C-band pump, an input signal of wavelength 1513.7 nm is up-converted across nearly 50 nm at a data rate of 40 Gb/s, and bit-error-rate measurements are performed on the converted signal.

引用

页码：182 / 184

页数：3

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