Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides

被引:80
作者
Lee, Benjamin G. [1 ]
Biberman, Aleksandr [1 ]
Turner-Foster, Amy C. [2 ]
Foster, Mark A. [3 ]
Lipson, Michal [2 ]
Gaeta, Alexander L. [3 ]
Bergman, Keren [1 ]
机构
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[3] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
关键词
Optical frequency conversion; optical Kerr effect; optical signal processing; silicon-on-insulator technology; CHIP; NETWORKS;
D O I
10.1109/LPT.2008.2009945
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present ultra-broadband wavelength conversion in silicon photonic waveguides at a data rate of 40 Gb/s. The dispersion-engineered device demonstrates a conversion bandwidth spanning the entire S-, C-, and L-bands of the ITU grid. Using a continuous-wave C-band pump, an input signal of wavelength 1513.7 nm is up-converted across nearly 50 nm at a data rate of 40 Gb/s, and bit-error-rate measurements are performed on the converted signal.
引用
收藏
页码:182 / 184
页数:3
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