Growth of environmentally stable transition metal selenide films

被引：151

作者：

Lin, Huihui ^{[1
]}

Zhu, Qi ^{[2
,3
]}

Shu, Dajun ^{[1
]}

Lin, Dongjing ^{[1
]}

Xu, Jie ^{[1
]}

Huang, Xianlei ^{[1
]}

Shi, Wei ^{[1
]}

Xi, Xiaoxiang ^{[1
]}

Wang, Jiangwei ^{[2
,3
]}

Gao, Libo ^{[1
]}

机构：

[1] Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing, Jiangsu, Peoples R China

[2] Zhejiang Univ, Sch Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou, Zhejiang, Peoples R China

[3] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou, Zhejiang, Peoples R China

来源：

NATURE MATERIALS | 2019年 / 18卷 / 06期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

LARGE-AREA SYNTHESIS; MOS2 ATOMIC LAYERS; HIGH-QUALITY; SUPERCONDUCTING DOME; GRAPHENE;

D O I：

10.1038/s41563-019-0321-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Two-dimensional transition metal selenides (TMSs) possess fascinating physical properties. However, many as-prepared TMSs are environmentally unstable and limited in sample size, which greatly hinder their wide applications in high-performance electrical devices. Here we develop a general two-step vapour deposition method and successfully grow different TMS films with controllable thickness, wafer size and high quality. The superconductivity of the grown NbSe2 film is comparable with sheets exfoliated from bulk materials, and can maintain stability after a variety of harsh treatments, which are ascribed to the absence of oxygen during the whole growth process. Such environmental stability can greatly simplify the fabrication procedure for device applications, and should be of both fundamental and technological significance in developing TMS-based devices.

引用

页码：602 / +

页数：7

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