Structural and electrical properties of W6+-doped Bi3TiNbO9 high-temperature piezoceramics

被引：114

作者：

Zhou, ZY

Dong, XL ^{[1
]}

Chen, H

Yan, HX

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[2] Queen Mary Univ London, Dept Mat, London E1 4NS, England

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2006年 / 89卷 / 05期

关键词：

D O I：

10.1111/j.1551-2916.2006.00957.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-temperature piezoceramics based on W6+-doped Bi3TiNbO9 (BTNO) were prepared by solid-state reaction sintering. A study of the donor doping effects on the structure, microstructure, and electrical properties was conducted. The Curie point (T-c) decreased in the range of 860 degrees-910 degrees C with increasing amount of W(6+)doping. W6+ donor dopant decreased the conductivity in BTNO by as much as two orders of magnitude. The increased resistivity in W6+-doped BTNO induced the materials to be polarized under a high enough field. The highest piezoelectric constant, d(33), of 12.0 pC/N was achieved with the composition of Bi3Ti0.99W0.01NbO9. Also, this composition had a good thermal depoling resistance property.

引用

页码：1756 / 1760

页数：5

共 25 条

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