Microstructural analysis of hard amorphous carbon films deposited with high-energy ion beams

被引：21
作者：
Brusa, RS
Somoza, A
Huck, H
Tiengo, N
Karwasz, GP
Zecca, A
Reinoso, M
Halac, EB
机构：
[1] Univ Nacl Ctr Prov Buenos Aires, IFIMAT, RA-7000 Tandil, Argentina
[2] Comis Invest Cient Prov Buenos Aires, RA-7000 Tandil, Argentina
[3] Comis Nacl Energia Atom, Dept Fis, RA-1429 Buenos Aires, DF, Argentina
来源：
APPLIED SURFACE SCIENCE | 1999年 / 150卷 / 1-4期
关键词：
hard amorphous carbon films; defects; graphitization; positron annihilation; Raman spectroscopy; electrical resistivity;
D O I：
10.1016/S0169-4332(99)00246-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Hard amorphous carbon films produced using high-energy (ca. 30 keV) ion beam deposition of CH3+ and CH4+ an silicon wafers, have been investigated by Positron Annihilation Spectroscopy (PAS), the results are correlated with Raman Spectroscopy and Electrical Resistivity measurements. The microstructural modifications of the films as a function of the annealing temperature in the 300-600 degrees C range have been studied. The evolution of the fractions of sp(2) and sp(3) bonds is described and related to the changes of the open volume defect distribution and the graphitization process. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：202 / 210
页数：9
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