A W-Band Down-Conversion Mixer in 90 nm CMOS with Excellent Matching and Port-to-Port Isolation for Automotive Radars

被引:0
作者
Lin, Yo-Sheng [1 ]
Li, Guo-Hao [1 ]
机构
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan
来源
2014 11TH INTERNATIONAL SYMPOSIUM ON WIRELESS COMMUNICATIONS SYSTEMS (ISWCS) | 2014年
关键词
CMOS; W-band; down-conversion mixer; Marchand balun; conversion gain; noise figure; isolation;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A W-band double-balanced down-conversion mixer for automotive radars using standard 90 nm CMOS technology is reported. The mixer comprises a double-balanced Gilbert cell with inductive source-degeneration RF transconductance stage for RF-port input matching bandwidth and conversion gain (CG) enhancement, a Marchand balun for converting the single RF input signal to differential signal, a Marchand balun for converting the single LO input signal to differential signal, and a baseband amplifier. The mixer consumes 13 mW and achieves excellent RF-port input reflection coefficient of -13.1 similar to-19.4 dB and LO-port input reflection coefficient of -9.1 similar to-11.8 dB for frequencies of 75 similar to 85 GHz. In addition, for frequencies of 75 similar to 85 GHz, the mixer achieves CG of -1 similar to 1.5 dB, LO-RF isolation of 43.5 similar to 49.2 dB, LO-IF isolation of 56.5 similar to 64.5 dB and RF-IF isolation of 35.9 similar to 39.4 dB, one of the best CG and port-to-port isolation results ever reported for a CMOS down-conversion mixer with operation frequency around 80 GHz.
引用
收藏
页码:54 / 58
页数:5
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