Sensitivity of ZnO based NH3 Sensor by RF Magnetron Sputtering

被引：0

作者：

Ahmed, S. ^{[1
]}

Sin, N. D. Md ^{[2
]}

Berhan, M. N. ^{[1
]}

Rusop, M. ^{[2
]}

机构：

[1] Univ Teknol MARA UiTM, Fac Mech Engn, Shah Alam 40450, Malaysia

[2] Univ Teknol MARA UiTM, Fac Elect Engn, NANO Elect Engn, Shah Alam 40450, Malaysia

来源：

ADVANCED MATERIALS ENGINEERING AND TECHNOLOGY | 2012年 / 626卷

关键词：

ZnO; Magnetron sputtering; RF power; Ammonia; Sensitivity; GAS-SENSING PROPERTIES; ELECTRICAL-PROPERTIES; THIN-FILMS; POWER;

D O I：

10.4028/www.scientific.net/AMR.626.168

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50 similar to 300 Watt) on the structural properties and sensitivity of NH3 sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

引用

页码：168 / +

页数：3

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