Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects

被引：62
作者：
Yang, Po-Kang [1 ]
Chang, Wen-Yuan [1 ]
Teng, Po-Yuan [2 ]
Jeng, Shuo-Fang [2 ]
Lin, Su-Jien [3 ]
Chiu, Po-Wen [2 ]
He, Jr-Hau [1 ,4 ]
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 106, Taiwan
[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
来源：
PROCEEDINGS OF THE IEEE | 2013年 / 101卷 / 07期
关键词：
Graphene; resistive switching; surface effect; transparent resistance random access memory (TRRAM); SINGLE-ZNO-NANOWIRE; ELECTRICAL-PROPERTIES; OXYGEN; FILMS; ENHANCEMENT; ADSORPTION; LAYERS;
D O I：
10.1109/JPROC.2013.2260112
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 10(2) cycles and the retention time longer than 10(4) s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.
引用
收藏
页码：1732 / 1739
页数：8
相关论文
共 38 条
[1]   Transfer-Free Batch Fabrication of Large-Area Suspended Graphene Membranes [J].
Aleman, Benjamin ;
Regan, William ;
Aloni, Shaul ;
Altoe, Virginia ;
Alem, Nasim ;
Girit, Caglar ;
Geng, Baisong ;
Maserati, Lorenzo ;
Crommie, Michael ;
Wang, Feng ;
Zettl, A. .
ACS NANO, 2010, 4 (08) :4762-4768
[2]   Graphene: Electronic and Photonic Properties and Devices [J].
Avouris, Phaedon .
NANO LETTERS, 2010, 10 (11) :4285-4294
[3]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]
[4]  
Chai Y., 2010, INT EL DEV M, DOI [10.1109/IEDM.2010.5703328, DOI 10.1109/IEDM.2010.5703328]
[5]   Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon [J].
Chai, Yang ;
Wu, Yi ;
Takei, Kuniharu ;
Chen, Hong-Yu ;
Yu, Shimeng ;
Chan, Philip C. H. ;
Javey, Ali ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) :3933-3939
[6]   Resistive switching behaviors of ZnO nanorod layers [J].
Chang, Wen-Yuan ;
Lin, Chin-An ;
He, Jr-Hau ;
Wu, Tai-Bor .
APPLIED PHYSICS LETTERS, 2010, 96 (24)
[7]   ZnO/Al2O3 core-shell nanorod arrays: growth, structural characterization, and luminescent properties [J].
Chen, C. Y. ;
Lin, C. A. ;
Chen, M. J. ;
Lin, G. R. ;
He, J. H. .
NANOTECHNOLOGY, 2009, 20 (18)
[8]   Probing Surface Band Bending of Surface-Engineered Metal Oxide Nanowires [J].
Chen, Cheng-Ying ;
Retamal, Jose Ramon Duran ;
Wu, I-Wen ;
Lien, Der-Hsien ;
Chen, Ming-Wei ;
Ding, Yong ;
Chueh, Yu-Lun ;
Wu, Chih-I ;
He, Jr-Hau .
ACS NANO, 2012, 6 (11) :9366-9372
[9]   Surface effects on optical and electrical properties of ZnO nanostructures [J].
Chen, Cheng-Ying ;
Chen, Ming-Wei ;
Ke, Jr-Jian ;
Lin, Chin-An ;
Retamal, Jose R. D. ;
He, Jr-Hau .
PURE AND APPLIED CHEMISTRY, 2010, 82 (11) :2055-2073
[10]   Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending [J].
Chen, Ming-Wei ;
Retamal, Jose Ramon Duran ;
Chen, Cheng-Ying ;
He, Jr-Hau .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :411-413
1234