Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask

被引：12

作者：

Wu, Guodong ^{[1
]}

Zhou, Jumei ^{[1
]}

Zhang, Hongliang ^{[1
]}

Zhu, Liqiang ^{[1
]}

Wan, Qing ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Gradient mask diffraction; junctionless thin-film transistors (TFTs); operation mode modulation;

D O I：

10.1109/LED.2012.2217934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A gradient shadow-mask diffraction method is proposed for the fabrication of junctionless indium-tin-oxide (ITO) and indium-zinc-oxide (IZO) thin-film transistors (TFTs) with different channel thicknesses on one glass substrate during one-batch radio-frequency magnetron sputtering. The operation mode and saturation field-effect mobility of the room-temperature-processed oxide-based junctionless TFTs are channel thickness dependent, and the threshold voltages shift from negative to positive when the self-assembled channel thickness is reduced to a critical thickness.

引用

页码：1720 / 1722

页数：3

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