Effects of H2O Pretreatment on the Capacitance-Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal-Oxide-Semiconductor Capacitors

被引：29

作者：

Liu, Xiang ^{[1
]}

Yeluri, Ramya ^{[1
]}

Lu, Jing ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 01期

关键词：

GaN; Al2O3; atomic layer deposition; interface states; traps; hysteresis; MOSCAP; ELECTRON-MOBILITY-TRANSISTOR; INSULATOR; PLASMA; TRAPS; ALD;

D O I：

10.1007/s11664-012-2246-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic layer deposition (ALD) of Al2O3 on Ga-face GaN is studied with respect to the effects of growth saturation, precursor injection sequence, and H2O pretreatment. A metal-oxide-semiconductor capacitor (MOSCAP) structure is fabricated to measure the capacitance-voltage (C-V) characteristics. The origin of C-V hysteresis is explained by a model considering the different trapping behaviors of interface states and oxide border traps. The interface state density (D (it)) is extracted as a function of band bending using an ultraviolet (UV)-assisted method. It is found that H2O pretreatment followed by saturated ALD growth produces the best interface quality, with a reduced D (it) compared with growth without H2O pretreatment.

引用

页码：33 / 39

页数：7

共 30 条

[1] Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures [J].

Carter, Andrew D. ;

Mitchell, William J. ;

Thibeault, Brian J. ;

Law, Jeremy J. M. ;

Rodwell, Mark J. W. .

APPLIED PHYSICS EXPRESS, 2011, 4 (09)

[2] High-frequency capacitance-voltage measurement of plasma-enhanced chemical-vapor-deposition-grown SiO2/n-GaN metal-insulator-semiconductor structures [J].

Chen, P ;

Wang, W ;

Chua, SJ ;

Zheng, YD .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3530-3532

[3] Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation [J].

Cico, K. ;

Gregusova, D. ;

Kuzmik, J. ;

Jurkovic, M. ;

Alexewicz, A. ;

Poisson, M. -A. di Forte ;

Pogany, D. ;

Strasser, G. ;

Delage, S. ;

Froehlich, K. .

SOLID-STATE ELECTRONICS, 2012, 67 (01) :74-78

[4] High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al2O3 Gate Insulators [J].

Corrion, A. L. ;

Shinohara, K. ;

Regan, D. ;

Milosavljevic, I. ;

Hashimoto, P. ;

Willadsen, P. J. ;

Schmitz, A. ;

Kim, S. J. ;

Butler, C. M. ;

Brown, D. ;

Burnham, S. D. ;

Micovic, M. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (08) :1062-1064

[5] EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

REBER, RA ;

MEISENHEIMER, TL ;

SCHWANK, JR ;

SHANEYFELT, MR ;

RIEWE, LC .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :5058-5074

[6] Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with+3V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition [J].

Fujiwara, Tetsuya ;

Yeluri, Ramya ;

Denninghoff, Dan ;

Lu, Jing ;

Keller, Stacia ;

Speck, James S. ;

DenBaars, Steven P. ;

Mishra, Umesh K. .

APPLIED PHYSICS EXPRESS, 2011, 4 (09)

[7] High-quality oxide/nitride/oxide gate insulator for GaN MIS structures [J].

Gaffey, B ;

Guido, LJ ;

Wang, XW ;

Ma, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :458-464

[8] Low-temperature Al2O3 atomic layer deposition [J].

Groner, MD ;

Fabreguette, FH ;

Elam, JW ;

George, SM .

CHEMISTRY OF MATERIALS, 2004, 16 (04) :639-645

[9] Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Postdeposition Annealing [J].

Ha, Jong-Bong ;

Kim, Dong-Seok ;

Im, Ki-Sik ;

Kim, Ki-Won ;

Kang, Hee-Sung ;

Park, Ki-Yeol ;

Lee, Jung-Hee .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (12)

[10] Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition [J].

Hashizume, T ;

Alekseev, E ;

Pavlidis, D ;

Boutros, KS ;

Redwing, J .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1983-1986

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