Oxygen precipitation in silicon doped with tin

被引：1

作者：

Khirunenko, LI ^{[1
]}

Pomozov, YV ^{[1
]}

Sosnin, MG ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷

关键词：

oxygen precipitation;

D O I：

10.4028/www.scientific.net/SSP.82-84.111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：111 / 114

页数：4

共 14 条

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[9] Oxygen in silicon doped with isovalent impurities
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