Electron flow in split-gated bilayer graphene

被引：14

作者：

Droescher, Susanne ^{[1
]}

Barraud, Clement ^{[1
]}

Watanabe, Kenji ^{[2
]}

Taniguchi, Takashi ^{[2
]}

Ihn, Thomas ^{[1
]}

Ensslin, Klaus ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

NEW JOURNAL OF PHYSICS | 2012年 / 14卷

基金：

瑞士国家科学基金会;

关键词：

HEXAGONAL BORON-NITRIDE; CONDUCTANCE; CONFINEMENT; DEVICES; FIELD;

D O I：

10.1088/1367-2630/14/10/103007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present transport measurements on a bilayer graphene sheet with a homogeneous back gate and a split top gate. The electronic transport data indicate the capability of directing electron flow through bilayer graphene nanostructures purely defined by electrostatic gating. Comparing the transconductance data recorded for different top gate geometries-continuous barrier and split gate-the observed transport features for the split gate can be attributed to the interference effects inside the narrow opening.

引用

页数：11

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