Preparation and characteristics of MoSe2 interlayer in bifacial Cu(In,Ga)Se2 solar cells

被引：41
|
作者：
Pang, J. B. [1 ]
Cai, Y. A. [1 ]
He, Q. [1 ]
Wang, H. [1 ]
Jiang, W. L. [1 ]
He, J. J. [1 ]
Yu, T. [1 ]
Liu, W. [1 ]
Zhang, Y. [1 ]
Sun, Y. [1 ]
机构：
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, 94 Weijin Rd, Tianjin 300071, Peoples R China
来源：
18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷
基金：
中国国家自然科学基金;
关键词：
MoSe2; selenization; Cu(In; Ga)Se-2; ohmic contact; bifacial solar cells; CONTACTS; TRANSPARENT;
D O I：
10.1016/j.phpro.2012.03.571
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MoSe2 thin films were formed simply by the selenization of Mo on bare soda lime glass substrate and glass coated with ZnO:Ga. Preliminarily, the structural property of MoSe2 was studied on bare soda lime glass with X-ray diffraction and Raman spectra. Furthermore, the electrical property of MoSe2 was discussed as the interlayer between the Cu(In,Ga)Se-2/ZnO:Ga double layers. Finally, bifacial solar cells with MoSe2 interlayer were illustrated with current-voltage curve and quantum efficiency. (C) 2012 Published by Elsevier B.V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).
引用
收藏
页码：372 / 378
页数：7
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