A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt Characteristics

被引:17
作者
Liu, Chao [1 ]
Chen, Wanjun [1 ]
Shi, Yijun [1 ]
Tao, Hong [1 ]
Zhou, Qijun [1 ]
Zuo, Huiling [1 ]
Qiao, Bin [1 ]
Xia, Yun [1 ]
Xiao, Ziyan [1 ]
Gao, Wuhao [1 ]
Chen, Nan [1 ]
Xu, Xiaorui [1 ]
Zhou, Qi [1 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
关键词
High di/dt; insulated gate thyristor; pulse power; repetitive pulse life; Schottky barrier (SB); SPREADING VELOCITY; SINGLE; MCT;
D O I
10.1109/TED.2018.2887137
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a novel insulated gate triggered thyristor with the Schottky barrier (SB-IGTT) is proposed for improved the repetitive pulse life and high-di/dt characteristics. Different from the conventional cathode shorted MOS-controlled thyristor (CS-MCT), an SB is specially imbedded to enlarge the effective turn-on area and enhance the electron-hole plasma spread during short duration pulse, which contributes significantly to relaxing the thermal concentration and improving the repetitive pulse life as well as achieves superior di/dt characteristics. The experimental results show that the proposed SB-IGTT continuously undergoes more than 220 000 shots at the pulse frequency of 5 Hz, yielding a 10x longer repetitive pulse life than the conventional CS-MCT. Simultaneously, SB-IGTT performs a di/dt up to 120 kA/mu s with peak current near 10 kA, increasing di/dt by about 20%. Improved repetitive pulse life and simultaneous superior di/dt characteristics indicate that the proposed SB-IGTT is suitable for repetitive pulse power applications.
引用
收藏
页码:1018 / 1025
页数:8
相关论文
共 30 条
  • [1] Arthur S. D., 1993, Fifth European Conference on Power Electronics and Applications (Conf. Publ. No.377), P266
  • [2] MOS-gated thyristors (MCTs) for repetitive high power switching
    Bayne, SB
    Portnoy, WM
    Hefner, AR
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2001, 16 (01) : 125 - 131
  • [3] Blicher A., 1976, THYRISTOR PHYS
  • [4] Chao Liu, 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P139, DOI 10.23919/ISPSD.2017.7988930
  • [5] High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications
    Chen Wan-Jun
    Sun Rui-Ze
    Peng Chao-Fei
    Zhang Bo
    [J]. CHINESE PHYSICS B, 2014, 23 (07)
  • [6] Design and Characterization of High di/dt CS-MCT for Pulse Power Applications
    Chen, Wanjun
    Liu, Chao
    Shi, Yijun
    Liu, Yawei
    Tao, Hong
    Liu, Chengfang
    Zhou, Qi
    Li, Zhaoji
    Zhang, Bo
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (10) : 4206 - 4212
  • [7] Chen WJ, 2016, INT SYM POW SEMICOND, P311
  • [8] High Peak Current MOS Gate-Triggered Thyristor With Fast Turn-On Characteristics for Solid-State Closing Switch Applications
    Chen, Wanjun
    Liu, Chao
    Tang, Xuefeng
    Lou, Lunfei
    Cheng, Wu
    Zhou, Qi
    Li, Zhaoji
    Zhang, Bo
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (02) : 205 - 208
  • [9] A behavioral model for MCT surge current analysis in pulse discharge
    Chen, Wanjun
    Sun, Ruize
    Xiao, Kun
    Zhu, Hongzhi
    Peng, Chaofei
    Ruan, Zhaoyang
    Ruan, Jianxin
    Zhang, Bo
    Li, Zhaoji
    [J]. SOLID-STATE ELECTRONICS, 2014, 99 : 31 - 37
  • [10] GEOMETRY OF THYRISTOR CATHODE SHUNTS
    CHU, CK
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 687 - +