Intrinsic spin lifetime of conduction electrons in germanium

被引:65
|
作者
Li, Pengke [1 ]
Song, Yang [2 ]
Dery, Hanan [1 ,2 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
[2] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
LATTICE-RELAXATION; RESONANCE EXPERIMENTS; SELECTION-RULES; SHALLOW DONORS; SILICON; GE; SI; SEMICONDUCTORS; INJECTION; DIAMOND;
D O I
10.1103/PhysRevB.86.085202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent k.p Hamiltonian in the vicinity of the L point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.
引用
收藏
页数:15
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