Intrinsic spin lifetime of conduction electrons in germanium

被引：65
|
作者：
Li, Pengke [1 ]
Song, Yang [2 ]
Dery, Hanan [1 ,2 ]
机构：
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
[2] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
来源：
PHYSICAL REVIEW B | 2012年 / 86卷 / 08期
基金：
美国国家科学基金会;
关键词：
LATTICE-RELAXATION; RESONANCE EXPERIMENTS; SELECTION-RULES; SHALLOW DONORS; SILICON; GE; SI; SEMICONDUCTORS; INJECTION; DIAMOND;
D O I：
10.1103/PhysRevB.86.085202
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent k.p Hamiltonian in the vicinity of the L point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.
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收藏
页数：15
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