Hot phonons contribution to Joule heating in single-walled carbon nanotubes

被引：10

作者：

Gautreau, Pierre ^{[1
]}

Ragab, Tarek ^{[1
,2
,3
]}

Basaran, Cemal ^{[1
]}

机构：

[1] SUNY Buffalo, Elect Packaging Lab, Buffalo, NY 14260 USA

[2] Univ Alexandria, Fac Engn, Alexandria 21526, Egypt

[3] Univ Tabuk, Nanotechnol Res Lab, Tabuk 71491, Saudi Arabia

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 10期

关键词：

TRANSPORT;

D O I：

10.1063/1.4766901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of hot phonons on the electron-phonon scattering rate and Joule heating is studied via an ensemble Monte Carlo (EMC) simulation with a step by step update of the phonon occupation number to account for the generation of hot phonons. The hot phonon contribution to Joule heating appears to be a function of the applied electric force field at room temperature, while it becomes independent of the applied electric force field for higher temperatures. The influence of hot phonons on Joule heating is more pronounced around room temperature and diminishes for higher temperatures. The results of the ensemble Monte Carlo simulation at very high temperatures (around 1800K and above) suggest that the presence of non-equilibrium phonons may reduce the Joule heating of single-walled carbon nanotubes (SWCNTs). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766901]

引用

页数：6

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