Temperature-Pressure-Sintering (TPS) diagram approach for sintering of silicon

被引：3

作者：

Lebrun, J. M. ^{[1
]}

Pascal, C. ^{[1
]}

Missiaen, J. M. ^{[1
]}

机构：

[1] Grenoble INP CNRS UJF, SIMaP, Lab Sci & Ingn Mat & Proc, F-38402 St Martin Dheres, France

来源：

MATERIALS LETTERS | 2012年 / 83卷

关键词：

Silicon; Sintering; Microstructure; Diagrams; DIFFUSION; POWDER;

D O I：

10.1016/j.matlet.2012.06.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temperature-(water vapor) Pressure-Sintering (TPS) diagrams were established to control the microstructure evolution and densification during sintering of silicon. Experiments were performed under controlled humidified atmospheres and corroborated diagram predictions. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：65 / 68

页数：4

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