Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory

被引：11
|
作者：
Park, Se Hwan [1 ]
Kim, Yoon
Kim, Wandong
Seo, Joo Yun
Park, Byung-Gook
机构：
[1] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
来源：
SOLID-STATE ELECTRONICS | 2012年 / 78卷
关键词：
3D NAND flash memory; Word-line stacking; Vertical channel; Ultra-thin body;
D O I：
10.1016/j.sse.2012.05.031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length. The VCSTAR, by using an ultra-thin body structure, can reduce the off-current level, and planar cell of VCSTAR assures insensitivity to process variables such as etch-slope. The performance of designed structure is described and the optimization of device parameter is performed by using TCAD simulation. To increase device performance and ease of fabrication, the modified fabrication method to reduce the spacing between gates is also introduced. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：34 / 38
页数：5
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