Characterization of ballas diamond depositions

被引:95
作者
Bühlmann, S
Blank, E
Haubner, R
Lux, B
机构
[1] Univ Technol Vienna, Inst Chem Technol Inorgan Mat, A-1060 Vienna, Austria
[2] Ecole Polytech Fed Lausanne, Dept Mat, CH-1015 Lausanne, Switzerland
关键词
diamond; growth conditions; Raman characterization; types of ballas;
D O I
10.1016/S0925-9635(98)00258-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Unfaceted, polycrystalline spherically grown diamond deposits having a radial structure have been observed since the early days of low pressure CVD diamond synthesis. Because the structure is quite similar to natural ballas stones, unfaceted CVD diamond is called ballas. So far, the general trend in diamond deposition has focused on well-faceted diamond layers, so CVD ballas deposits have not been systematically investigated. Low pressure growth of ballas always occur under conditions that are "non-optimal", i.e. at least one parameter exceeds the range for a diamond growth leading to well-faceted diamond crystals. CVD ballas can consist of more than 99% of pure diamond; its microstructure reveals high amounts of micro-twins. Several morphological ballas structures have been observed by varying the deposition conditions, i.e. ballases having faceted areas, Bat ballases, ballases with graphitic inclusions etc. Various deposits were characterized by Raman spectroscopy and impurities were measured by SIMS. Low pressure ballas diamond layers have a hardness quite similar to pure diamond. Of particular interest is the fact that cleavage and crack propagation along crystallographic planes can - due to the presence of micro-twins - be expected to be much lower in ballas than in single-crystalline diamonds. Thus, ballas structures are of particular interest for wear applications. Ballas type diamonds containing fine graphite particles could also be of interest for flat panel displays, as the graphite permits high electron emissions, (C) 1999 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码:194 / 201
页数:8
相关论文
共 16 条
  • [1] DIAMOND DEPOSITION TECHNOLOGIES
    BACHMANN, PK
    VANENCKEVORT, W
    [J]. DIAMOND AND RELATED MATERIALS, 1992, 1 (10-11) : 1021 - 1034
  • [2] Bichler R, 1985, THESIS VIENNA U TECH
  • [3] Bichler R, 1989, HIGH TEMP HIGH PRESS, V21, P576
  • [4] Davies G, 1994, EMIS DATAREVIEWS SER, V9
  • [5] CHARACTERIZATION OF DIAMOND COATINGS WITH TRANSMISSION ELECTRON-MICROSCOPY
    JOKSCH, M
    WURZINGER, P
    PONGRATZ, P
    HAUBNER, R
    LUX, B
    [J]. DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 681 - 687
  • [6] CHARACTERIZATION OF DIAMOND FILMS BY RAMAN-SPECTROSCOPY
    KNIGHT, DS
    WHITE, WB
    [J]. JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) : 385 - 393
  • [7] LINDLBAUER A, 1992, THESIS VIENNA U TECH
  • [8] Lindlbauer A, 1992, REF MET HARD MAT, V11, P247
  • [9] LUX B, 1997, REFRACT MET HARD MAT, V15, P263
  • [10] Complementary application of electron microscopy and micro-Raman spectroscopy for microstructure, stress, and bonding defect investigation of heteroepitaxial chemical vapor deposited diamond films
    Michler, J
    von Kaenel, Y
    Stiegler, J
    Blank, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) : 187 - 197