Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

被引：26
作者：
Fiorenza, Patrick [1 ]
Greco, Giuseppe [1 ,2 ]
Giannazzo, Filippo [1 ]
Lo Nigro, Raffaella [1 ]
Roccaforte, Fabrizio [1 ]
机构：
[1] CNR IMM, I-95121 Catania, Italy
[2] Univ Catania, Scuola Super Catania, I-95123 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 17期
关键词：
OHMIC CONTACTS; GAN; RELIABILITY;
D O I：
10.1063/1.4761961
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, the conduction mechanism through epitaxial nickel oxide (NiO) dielectric films grown by metal-organic chemical vapor deposition on AlGaN/GaN heterostructures was investigated. In particular, macroscopic current-voltage measurements carried out at different temperatures allowed to demonstrate that Poole-Frenkel (PF) mechanism rules the conduction through the dielectric layer, with an emission barrier of 0.2 eV. Conductive atomic force microscopic measurements were carried out to directly image the presence of preferential current spots on the NiO surface, which have been correlated to the defects responsible for the PF emission. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4761961]
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