An Enhanced Photoelectric Conversion Efficiency of n-Type Crystalline Silicon p-n Junctions Using a Ferroelectric Passivation Layer

被引：3
作者：
Li Zi-Zhen [1 ,2 ]
Tang Rong-Sheng [3 ]
Wang Xiao-Feng [1 ,2 ]
Zheng Fen-Gang [1 ,2 ]
机构：
[1] Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China
[2] Soochow Univ, Jiangsu Key Lab Thin Films, Suzhou 215006, Peoples R China
[3] Taizhou Polytech Coll, Elect & Informat Engn Dept, Taizhou 225300, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 04期
基金：
中国国家自然科学基金;
关键词：
SOLAR-CELLS; PHOTOCURRENT; SURFACE; BIFEO3; FILMS; SI;
D O I：
10.1088/0256-307X/31/4/047701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A multilayered structure consisting of ferroelectric Pb(Zr, Ti)O-3 (PZT) film is deposited by sputtering on the crystalline silicon p-n junction without any buffer layer. The photovoltaic output of the p-n junction is greatly enhanced due to the usage of In2O3:Sn(ITO)/PZT as top surface passivation layers. The short circuit current and photoelectric conversion efficiency of the p-n junction with ITO/PZT ferroelectric films increase about four and six times, respectively, compared with those without any passivation layers. Improvement in the passivated device is mainly attributed to the built-in field at the ITO/PZT interface.
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页数：4
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