Photon localization and lasing in disordered GaNxAs1-x optical superlattices

被引：5
|
作者：
Sun, BQ [1 ]
Jiang, DS [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.73.195112
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We propose an approach to fabricate a disordered optical superlattice using microcracking faces in GaNxAs1-x epilayers. Laser action is observed and the emission exhibits random laser behaviors. A transfer-matrix simulation suggests photon localization occurs at the lasing modes.
引用
收藏
页数：4
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