Influence of film characteristics on the sputtering rate of MgO

被引：0

作者：

Hidaka, S ^{[1
]}

Ishimoto, M ^{[1
]}

Iwase, N ^{[1
]}

Betsui, K ^{[1
]}

Inoue, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Akashi, Hyogo 6748555, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 1999年 / E82C卷 / 10期

关键词：

MgO; PDP; sputtering; density;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the relationship between the film characteristics and the sputtering rate of the MgO protecting layer in AC-PDP. As possible elements for determining the sputtering rate, we considered the density, orientation, and surface morphology. With respect to the orientation, we found that the sputtering rate increased for the sequence of (200) < (220) < (111). However, we noticed that orientation and surface structure are not really decisive factors affecting the sputtering rate; the density of the film is most important.

引用

页码：1804 / 1807

页数：4

共 50 条

[1] The influence of the properties of evaporation source on the discharge characteristics of MgO film
Tanaka, Yoshikazu
Hsiao, Shih Hsiu
Morimoto, Yasuhiko
Nakao, Akihiro
Ide-Ektessabi, Ari
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2) : 209 - 212
[2] Epitaxial Ir thin film on (001) MgO single crystal prepared by sputtering
Ishikawa, T
Abe, Y
Shinkai, S
Sasaki, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A): : 5747 - 5748
[3] Quantitative modeling of reactive sputtering process for MgO thin film deposition
Matsuda, Y
Otomo, K
Fujiyama, H
THIN SOLID FILMS, 2001, 390 (1-2) : 59 - 63
[4] Dependence of the material properties and PDP discharging characteristics on the MgO evaporation rate
Choi, Hyung Wook
Kim, Yong Jae
Kwon, Sang Jik
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (04) : 1465 - 1469
[5] Influence of film thickness on microstructural and electrical properties of copper oxide thin film prepared by magnetron sputtering
Sangwaranatee, N. W.
Sangwaranatee, N.
Horprathum, M.
Chananonnawathorn, C.
Sustini, E.
MATERIALS TODAY-PROCEEDINGS, 2018, 5 (07) : 15198 - 15202
[6] Influence of Al Content on the Properties of MgO Grown by Reactive Magnetron Sputtering
Saraiva, Marta
Chen, Hong
Leroy, Wouter P.
Mahieu, Stijn
Jehanathan, Neerushana
Lebedev, Oleg
Georgieva, Violeta
Persoons, Rosita
Depla, Diederik
PLASMA PROCESSES AND POLYMERS, 2009, 6 : S751 - S754
[7] High-performance MgO thin films for PDPs with a high-rate sputtering-deposition process
Terauchi, Masaharu
Hashimoto, Jun
Nishitani, Hikaru
Fukui, Yusuke
Okafuji, Michiko
Yamashita, Hitoshi
Hayata, Hiroshi
Okuma, Takafumi
Yamanishi, Hitoshi
Nishitani, Mikihiko
Kitagawa, Masatoshi
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2008, 16 (12) : 1195 - 1201
[8] MgO Thin Film Growth on S (001) by Radio-Frequency Sputtering Method
Singh, Jitendra Pal
Kumar, Manish
Lim, Weon Cheol
Lee, Hyun Hwi
Lee, Young Mi
Lee, Sangsul
Chae, Keun Hwa
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, 20 (12) : 7530 - 7534
[9] Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering
Jin, Hao
Feng, Bin
Dong, Shurong
Zhou, Changjian
Zhou, Jian
Yang, Yi
Ren, Tianling
Luo, Jikui
Wang, Demiao
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (07) : 1948 - 1954
[10] Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering
Hao Jin
Bin Feng
Shurong Dong
Changjian Zhou
Jian Zhou
Yi Yang
Tianling Ren
Jikui Luo
Demiao Wang
Journal of Electronic Materials, 2012, 41 : 1948 - 1954

← 1 2 3 4 5 →