Thermomigration of molten Cr-Si-C alloy in 4H-SiC at 1873-2273 K

被引：7

作者：

Kawanishi, Sakiko ^{[1
]}

Yoshikawa, Takeshi ^{[2
]}

Shibata, Hiroyuki ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 518卷

关键词：

Solubility; Diffusion; Temperature gradient zone melting method; Semiconducting silicon compounds; Silicon carbide; Thermodynamics; SOLUTION GROWTH; THERMODYNAMIC EVALUATION; LIQUID-PHASE; SILICON; DIFFUSION; VISCOSITY; SURFACE;

D O I：

10.1016/j.jcrysgro.2019.04.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thermomigration of molten Cr-Si-C alloys in silicon carbide (SiC) along a quasi-binary Cr-SiC system at 1873-2273 K was evaluated by the temperature gradient zone melting method. Solute diffusivity in the molten alloy and distribution of Cr between 4H-SiC and the alloy were studied, where both properties are important for designing a process for the solution growth of single crystalline 4H-SiC. The migration was found to be controlled by interdiffusion in the molten alloy from the measured migration rate. The obtained interdiffusion coefficients were (0.11-1.3) x10(-7)m(2) s(-1), and these increased with increasing temperature. The Cr impurities in 4H-SiC were found to be distributed to maintain the thermodynamic equilibration with the alloy, and increased with temperature in the range of (0.26-2.2) x10(17) cm(-3). The thermodynamic property of Cr in SiC was assessed, and will enable the solubility of Cr in 4H-SiC grown at various solvent temperatures and compositions to be estimated.

引用

页码：73 / 80

页数：8

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