Low-Noise Amplifier with 12.1 dB Gain and 5.456 dB NF for V-Band Applications in GaAs 0.15μm pHEMT Process

被引：0

作者：

Chang, Chi-Chen ^{[1
]}

Chiang, Yen-Chung ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

来源：

PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2012年

关键词：

GaAs pHEMT process technology; low noise amplifier; noise figure; V band; GHZ LNA; TECHNOLOGY; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a two-stage low-noise amplifier (LNA) designed for V-band applications is presented. Both stages are the common source-common gate (CS-CG) cascoded topologies with inductive degeneration structure for minimizing the noise figure (NF). This proposed LNA is implemented in a GaAs 0.15 mu m pHEMT process technology, which achieves a peak gain of 12.1 dB, a NF of 5.456 dB, and an input P-1dB of -20 dBm at the 56.8 GHz frequency. The 3dB bandwidth is from 54.9 GHz to 58 GHz. The power consumption of the proposed LNA is 26.6 mW from the 1.8V voltage supply.

引用

页码：16 / 18

页数：3

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