Efficient thermoelectric performance in silicon nano-films by vacancy-engineering

被引：30

作者：

Bennett, Nick S. ^{[1
]}

Wight, Neil M. ^{[1
]}

Popuri, Srinivasa R. ^{[2
]}

Bos, Jan-Willem G. ^{[2
]}

机构：

[1] Heriot Watt Univ, Nanomat Lab, Inst Mech Proc & Energy Engn, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Heriot Watt Univ, Ctr Adv Energy Storage & Recovery, Inst Chem Sci, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

NANO ENERGY | 2015年 / 16卷

基金：

英国工程与自然科学研究理事会;

关键词：

Thermoelectric; Silicon; Thermal conductivity; Nano-film; Vacancy; THERMAL-CONDUCTIVITY; SI; DEFECTS; TEMPERATURE; IMPLANTATION;

D O I：

10.1016/j.nanoen.2015.07.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The introduction of large concentrations of lattice vacancies in silicon nano-films creates more than a 20-fold reduction in thermal conductivity, while electrical conductivity and Seebeck coefficient are largely maintained. This results in thermoelectric performance comparable to silicon nanowires, but crucially leaves the silicon structure indistinguishable from bulk silicon, resulting in a robust material that is straight-forward to fabricate. This finding significantly advances the potential of silicon ultra-thin-films as a high-performance thermoelectric material. (C) 2015 The Authors. Published by Elsevier Ltd.

引用

页码：350 / 356

页数：7

共 41 条

[1]

[Anonymous], 2013, THERMOELECTRIC ENERG

[2]

[Anonymous], 2006, THESIS

[3] Radiation-Corrected Harman Method for Characterization of Thermoelectric Materials [J].