Room-temperature observations of the weak localization in low-mobility graphene films

被引：13

作者：

Han, Junhao ^{[1
]}

Wang, Shanyue ^{[1
]}

Qian, Di ^{[1
]}

Song, Fengqi ^{[1
]}

Wang, Xinran ^{[2
]}

Wang, Xuefeng ^{[2
]}

Wang, Baigeng ^{[1
]}

Han, Min ^{[1
]}

Zhou, Jianfeng ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Sch Elect & Elect Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 21期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; BILAYER GRAPHENE; CARBON-SOURCES; COPPER FOILS; MONOLAYER; GROWTH; GAS;

D O I：

10.1063/1.4839336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report room-temperature observations of the quantum conductance corrections caused by the weak localization in graphene films synthesized using solid-state-source chemical vapor deposition. Both Raman spectroscopy and Hall measurements showed strong disorder in the samples with a low mobility of similar to 430 cm(2)/V s. The emergence of weak localization at room temperature arises from the competition between the valley-dependent scattering and the thermal dephasing in such low-quality samples, although quantum effects normally appear in the samples that have an ideal structure at cryogenic temperatures. The large disorder in our low-mobility samples unexpectedly preserved the quantum mechanical weak localization. (C) 2013 AIP Publishing LLC.

引用

页数：5

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