Removal of Ion implanted Poly vinyl phenol using Wet Ozone

被引:0
|
作者
Goto, Yousuke [1 ]
Angata, Yukihiro [1 ]
Yamamoto, Masashi [1 ]
Seki, Toshio [2 ]
Matsumoto, Jiro [3 ]
Horibe, Hideo [1 ,4 ]
机构
[1] Kanazawa Inst Technol, Res Lab Integrated Technol Syst, Haku San, Ishikawa 9240838, Japan
[2] Kyoto Univ, Dept Nucl Engn, Kyoto 6110011, Japan
[3] Kyoto Univ, Quantum Sci & Engn Ctr, Kyoto 6110011, Japan
[4] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
关键词
removal; wet ozone; photoresist; environment; RESIST REMOVAL;
D O I
暂无
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We have investigated the removal of poly vinyl phenol (PVP) into which was B, P and As ions implanted with a dose of 5 x10(13)similar to 5 x10(15) atoms/cm(2) at 70keV, using wet ozone. Also, we investigated the thickness of altered layer of ion-implanted PVP using Secondary Ion Mass Spectrometry (SIMS). We investigated the chemical reactivity of wet ozone and ion-implanted PVP by FT-IR. The removability of ion-implanted PVP using wet ozone decreased with increasing dose because the degrees of alteration of benzene ring and O-H group increase with increasing dose. From the results of SIMS, the thickness of altered layer of B-ion-implanted PVP was 387nm, that of P-ion-implanted PVP was 232nm, and that of As-ion-implanted PVP was 142nm. However, the degree of alteration should increase in order of B, P and As, because any samples were implanted at same acceleration energy (70keV). FT-IR indicated that benzene ring content percentage was almost same at removed and not removed. On the other hand, in O-H group, there is a clear difference at removed and not removed, O-H group content percentage decreased drastically at implanted PVP with a dose of 5 x 10(14) atoms/cm(2) over. Therefore, the removability of ion-implanted PVP using wet ozone depends on O-H group content than that of benzene ring.
引用
收藏
页码:467 / 472
页数:6
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